elektronische bauelemente 2SA562 -0.5a, -35v pnp plastic encapsulated transistor 14-jan-2011 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c e k f d b g h j 3 base 1 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features excellent h fe linearity classification of h fe product-rank 2SA562-o 2SA562-y range 70~140 120~240 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo -35 v collector to emitter voltage v ceo -30 v emitter to base voltage v ebo -5 v collector current - continuous i c -500 ma collector power dissipation p c 500 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo -35 - - v i c = -100 a, i e = 0a collector to emitter breakdown voltage v (br)ceo -30 - - v i c = -1ma, i b = 0a emitter to base breakdown voltage v (br)ebo -5 - - v i e = -100 a, i c = 0a collector cut-off current i cbo - - -0.1 a v cb = -35 v, i e = 0 a emitter cut-off current i ebo - - -0.1 a v eb = -5 v, i c = 0 ma dc current gain h fe 70 - 240 v ce = -1v, i c = -100ma collector to emitter saturation voltage v ce(sat) - - -0.25 v i c = -100ma, i b = -10ma base to emitter voltage v be - - -1 v v ce = -1v , i c = -100ma transition frequency f t - 200 - mhz v ce = -6v, i c = -20ma collector output capacitance c ob - 13 - pf v cb = -6v, i e = 0a, f= 1mhz to-92 1 11 1 emitter 2 22 2 collector 3 33 3 base millimeter ref. min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1. 10 - j 2.42 2.66 k 0.36 0.76
elektronische bauelemente 2SA562 -0.5a, -35v pnp plastic encapsulated transistor 14-jan-2011 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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